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MTD516 BC546 1N6836 AP3P050H A08TB60 1N5827 1771101 AOD3N80
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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-220C package *Complement to type MJE15031 *High transition frequency *DC current gain specified to 4.0 amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS *Designed for use as high-frequency drivers in audio amplifiers.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
MJE15030
Absolute maximum ratings (Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 8 16 2 2 W 50 150 -65~150 UNIT V V V A A A
THERMAL CHARACTERISTICS
SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 2.5 62.5 UNIT /W /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=1A ;IB=0.1A IC=1A ; VCE=2V VCB=150V; IE=0 VCE=150V; IB=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=2A ; VCE=2V IC=3A ; VCE=2V IC=4A ; VCE=2V IC=0.5A;VCE=10V;f=10MHz 40 40 40 20 30 MIN 150
MJE15030
SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT
TYP.
MAX
UNIT V
0.5 1.0 10 0.1 10
V V A mA A
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE15030
Fig.2 Outline dimensions (unindicated tolerance: 0.10mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE15030
4


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